BSH114 Todos los transistores

 

BSH114 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSH114
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO236AB
 

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BSH114 Datasheet (PDF)

 ..1. Size:220K  nxp
 bsh114.pdf pdf_icon

BSH114

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:290K  philips
 bsh112.pdf pdf_icon

BSH114

BSH112N-channel enhancement mode field-effect transistorRev. 01 25 August 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH112 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa

 9.2. Size:296K  philips
 bsh111-01.pdf pdf_icon

BSH114

BSH111N-channel enhancement mode field-effect transistorRev. 01 07 August 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3

 9.3. Size:281K  philips
 bsh111.pdf pdf_icon

BSH114

BSH111N-channel enhancement mode field-effect transistorRev. 02 26 April 2002 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3. A

MOSTRAR MÁS

Otros transistores... BLS7G2933S-150 , BLS7G3135L-350P , BLS7G3135LS-350P , 2SK3408 , BSH103 , BSH105 , BSH108 , BSH111 , AON6380 , BSH121 , BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 .

History: BRCS150N12SRA | BLS7G3135L-350P

 

 
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