All MOSFET. BSH114 Datasheet

 

BSH114 Datasheet and Replacement


   Type Designator: BSH114
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO236AB
 

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BSH114 Datasheet (PDF)

 ..1. Size:220K  nxp
 bsh114.pdf pdf_icon

BSH114

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:290K  philips
 bsh112.pdf pdf_icon

BSH114

BSH112N-channel enhancement mode field-effect transistorRev. 01 25 August 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH112 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa

 9.2. Size:296K  philips
 bsh111-01.pdf pdf_icon

BSH114

BSH111N-channel enhancement mode field-effect transistorRev. 01 07 August 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3

 9.3. Size:281K  philips
 bsh111.pdf pdf_icon

BSH114

BSH111N-channel enhancement mode field-effect transistorRev. 02 26 April 2002 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3. A

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Datasheet: BLS7G2933S-150 , BLS7G3135L-350P , BLS7G3135LS-350P , 2SK3408 , BSH103 , BSH105 , BSH108 , BSH111 , IRLZ44N , BSH121 , BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 .

History: AP75N07GW | AOTS21319C | SIHF840AS | UTT6NP10G-S08-R | SIA537EDJ | EKI04036 | QM2N7002E3K1

Keywords - BSH114 MOSFET datasheet

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