BSH114 PDF and Equivalents Search

 

BSH114 Specs and Replacement

Type Designator: BSH114

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO236AB

BSH114 substitution

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BSH114 datasheet

 ..1. Size:220K  nxp
bsh114.pdf pdf_icon

BSH114

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 9.1. Size:290K  philips
bsh112.pdf pdf_icon

BSH114

BSH112 N-channel enhancement mode field-effect transistor Rev. 01 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH112 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa... See More ⇒

 9.2. Size:296K  philips
bsh111-01.pdf pdf_icon

BSH114

BSH111 N-channel enhancement mode field-effect transistor Rev. 01 07 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH111 in SOT23. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 3... See More ⇒

 9.3. Size:281K  philips
bsh111.pdf pdf_icon

BSH114

BSH111 N-channel enhancement mode field-effect transistor Rev. 02 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability BSH111 in SOT23. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. A... See More ⇒

Detailed specifications: BLS7G2933S-150, BLS7G3135L-350P, BLS7G3135LS-350P, 2SK3408, BSH103, BSH105, BSH108, BSH111, AON6380, BSH121, BSH201, BSH202, BSH203, BSH205, BSH207, BSP030, BSP100

Keywords - BSH114 MOSFET specs

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