BSH205 Todos los transistores

 

BSH205 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSH205
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.417 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO236AB
 

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BSH205 Datasheet (PDF)

 ..1. Size:112K  philips
bsh205 3.pdf pdf_icon

BSH205

Philips Semiconductors Product specification P-channel enhancement mode BSH205 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -0.75 Ag Subminiature surface mountpackage RDS(ON) 0.5 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT23P-channel, enhan

 0.1. Size:276K  nxp
bsh205g2.pdf pdf_icon

BSH205

BSH205G220 V, P-channel Trench MOSFET29 April 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power di

 9.1. Size:110K  philips
bsh202 3.pdf pdf_icon

BSH205

Philips Semiconductors Product specification P-channel enhancement mode BSH202 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Low threshold voltage VDS = -30 V Fast switching Logic level compatible ID = -0.52 Ag Subminiature surface mountpackage RDS(ON) 0.9 (VGS = -10 V)dGENERAL DESCRIPTION PINNING SOT23P-channel, enhancement mode, PIN DESCRIPT

 9.2. Size:118K  philips
bsh201 3.pdf pdf_icon

BSH205

Philips Semiconductors Product specification P-channel enhancement mode BSH201 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Low threshold voltage VDS = -60 V Fast switching Logic level compatible ID = -0.3 Ag Subminiature surface mountpackage RDS(ON) 2.5 (VGS = -10 V)dGENERAL DESCRIPTION PINNING SOT23P-channel, enhancement mode, PIN DESCRIPTI

Otros transistores... BSH105 , BSH108 , BSH111 , BSH114 , BSH121 , BSH201 , BSH202 , BSH203 , 20N50 , BSH207 , BSP030 , BSP100 , BSP110 , BSP122 , BSP126 , BSP130 , BSP220 .

History: NCE65N330R | PMN230ENEA | AOB414 | NVMFS5C460N

 

 
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