BSS84AKM Todos los transistores

 

BSS84AKM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS84AKM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm

Encapsulados: SOT883

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BSS84AKM datasheet

 ..1. Size:1411K  nxp
bss84akm.pdf pdf_icon

BSS84AKM

BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV

 0.1. Size:1030K  nxp
bss84akmb.pdf pdf_icon

BSS84AKM

BSS84AKMB 50 V, single P-channel Trench MOSFET Rev. 1 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ElectroStatic Di

 7.1. Size:1426K  nxp
bss84akv.pdf pdf_icon

BSS84AKM

BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to

 7.2. Size:1420K  nxp
bss84ak.pdf pdf_icon

BSS84AKM

BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

Otros transistores... BSS138BK , BSS138BKW , BSS138P , BSS138PS , BSS138PW , BSS192 , BSS83 , BSS84AK , 8N60 , BSS84AKS , BSS84AKT , BSS84AKV , BSS84AKW , BSS87 , BST82 , BUK6207-55C , BUK6209-30C .

History: BLF7G27L-135 | CS10N80V

 

 

 


History: BLF7G27L-135 | CS10N80V

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