Справочник MOSFET. BSS84AKM

 

BSS84AKM Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BSS84AKM
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.23 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7.5 Ohm
   Тип корпуса: SOT883
     - подбор MOSFET транзистора по параметрам

 

BSS84AKM Datasheet (PDF)

 ..1. Size:1411K  nxp
bss84akm.pdfpdf_icon

BSS84AKM

BSS84AKM50 V, 230 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV

 0.1. Size:1030K  nxp
bss84akmb.pdfpdf_icon

BSS84AKM

BSS84AKMB50 V, single P-channel Trench MOSFETRev. 1 6 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ElectroStatic Di

 7.1. Size:1426K  nxp
bss84akv.pdfpdf_icon

BSS84AKM

BSS84AKV50 V, 170 mA dual P-channel Trench MOSFETRev. 1 19 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to

 7.2. Size:1420K  nxp
bss84ak.pdfpdf_icon

BSS84AKM

BSS84AK50 V, 180 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

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History: IXTK170P10P | SVD2N60D | HP4936DY | IRF9620S | AUIRFP064N | SML100J22 | IXFP18N65X2

 

 
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