BSS84AKT Todos los transistores

 

BSS84AKT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS84AKT

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm

Encapsulados: SC75

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BSS84AKT datasheet

 7.1. Size:1030K  nxp
bss84akmb.pdf pdf_icon

BSS84AKT

BSS84AKMB 50 V, single P-channel Trench MOSFET Rev. 1 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ElectroStatic Di

 7.2. Size:1426K  nxp
bss84akv.pdf pdf_icon

BSS84AKT

BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to

 7.3. Size:1420K  nxp
bss84ak.pdf pdf_icon

BSS84AKT

BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

 7.4. Size:1431K  nxp
bss84aks.pdf pdf_icon

BSS84AKT

BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified

Otros transistores... BSS138P , BSS138PS , BSS138PW , BSS192 , BSS83 , BSS84AK , BSS84AKM , BSS84AKS , 75N75 , BSS84AKV , BSS84AKW , BSS87 , BST82 , BUK6207-55C , BUK6209-30C , BUK6210-55C , BUK6211-75C .

History: LSH60R650HT | TT8M2 | SVSP65R110SHD4

 

 

 


History: LSH60R650HT | TT8M2 | SVSP65R110SHD4

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