BSS84AKT Todos los transistores

 

BSS84AKT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS84AKT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
   Paquete / Cubierta: SC75
 

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BSS84AKT Datasheet (PDF)

 7.1. Size:1030K  nxp
 bss84akmb.pdf pdf_icon

BSS84AKT

BSS84AKMB50 V, single P-channel Trench MOSFETRev. 1 6 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ElectroStatic Di

 7.2. Size:1426K  nxp
 bss84akv.pdf pdf_icon

BSS84AKT

BSS84AKV50 V, 170 mA dual P-channel Trench MOSFETRev. 1 19 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to

 7.3. Size:1420K  nxp
 bss84ak.pdf pdf_icon

BSS84AKT

BSS84AK50 V, 180 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

 7.4. Size:1431K  nxp
 bss84aks.pdf pdf_icon

BSS84AKT

BSS84AKS50 V, 160 mA dual P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified

MOSTRAR MÁS

Otros transistores... BSS138P , BSS138PS , BSS138PW , BSS192 , BSS83 , BSS84AK , BSS84AKM , BSS84AKS , IRF520 , BSS84AKV , BSS84AKW , BSS87 , BST82 , BUK6207-55C , BUK6209-30C , BUK6210-55C , BUK6211-75C .

History: SFF16N60NC | IRF530NSPBF | JCS4N65CB | TPCA8068-H | IRF4104PBF | BL3N105-P

 

 
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