BSS84AKT Todos los transistores

 

BSS84AKT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS84AKT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
   Paquete / Cubierta: SC75
     - Selección de transistores por parámetros

 

BSS84AKT Datasheet (PDF)

 7.1. Size:1030K  nxp
 bss84akmb.pdf pdf_icon

BSS84AKT

BSS84AKMB50 V, single P-channel Trench MOSFETRev. 1 6 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ElectroStatic Di

 7.2. Size:1426K  nxp
 bss84akv.pdf pdf_icon

BSS84AKT

BSS84AKV50 V, 170 mA dual P-channel Trench MOSFETRev. 1 19 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to

 7.3. Size:1420K  nxp
 bss84ak.pdf pdf_icon

BSS84AKT

BSS84AK50 V, 180 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

 7.4. Size:1431K  nxp
 bss84aks.pdf pdf_icon

BSS84AKT

BSS84AKS50 V, 160 mA dual P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: KMB4D8DN55Q | SSF11NS70UF | MTP2402Q8 | SI4368DY | SML25SCM650N2A | SML801R2AN | SWK15N04V

 

 
Back to Top

 


 
.