BSS84AKT MOSFET. Datasheet pdf. Equivalent

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BSS84AKT Datasheet (PDF)

5.1. bss84lt1rev0x.pdf Size:116K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D ? BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P–CHANNEL Field Effect Transistors ENHANCEMENT–MODE TMOS MOSFET ? 3 DRAIN 3 1 2 1 CASE 318–08, Style 21 GATE SOT–23 (TO–236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit

5.2. bss84lt1.pdf Size:120K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D ? BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P–CHANNEL Field Effect Transistors ENHANCEMENT–MODE TMOS MOSFET ? 3 DRAIN 3 1 2 1 CASE 318–08, Style 21 GATE SOT–23 (TO–236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit

 5.3. bss84rev0.pdf Size:139K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84/D ? BSS84 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P–CHANNEL Field Effect Transistors ENHANCEMENT–MODE TMOS MOSFET ? 3 DRAIN 3 1 2 1 CASE 318–08, Style 21 GATE SOT–23 (TO–236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain

5.4. bss84.pdf Size:122K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84/D ? BSS84 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P–CHANNEL Field Effect Transistors ENHANCEMENT–MODE TMOS MOSFET ? 3 DRAIN 3 1 2 1 CASE 318–08, Style 21 GATE SOT–23 (TO–236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain

 5.5. bss84 2.pdf Size:74K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor 1997 Jun 18 Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode BSS84 vertical D-MOS transistor FEATURES PINNING - SOT23 • Low threshold voltage PIN SYMBOL DESCRIPTION • Dire

5.6. bss84.pdf Size:139K _fairchild_semi

July 2002 BSS84 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect • -0.13A, -50V. RDS(ON) = 10? @ VGS = -5 V transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on- • Voltage controlled p-channel small s

5.7. bss84dw.pdf Size:194K _diodes

BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-363 • Low Gate Threshold Voltage • Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Terminals: Solderable per MIL-

5.8. bss84v.pdf Size:209K _diodes

BSS84V DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-563 • Low Gate Threshold Voltage • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Lead Free By Design/RoHS Compli

5.9. bss84 2.pdf Size:101K _diodes

BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-23 • Low Gate Threshold Voltage • Case Material: UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020 • Fast Switching Speed • Terminals: Solderable per MIL-STD-202, Method 208 • Low Input/Output Leakage • Lead Fr

5.10. bss84w.pdf Size:139K _diodes

BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-323 • Low Gate Threshold Voltage • Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Terminal Connections: See Di

5.11. bss8402dw.pdf Size:173K _diodes

BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SOT-363 • Low Gate Threshold Voltage • Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-

5.12. bss84p rev2.5.pdf Size:702K _infineon

BSS 84 P SIPMOS? Small-Signal-Transistor Product Summary Feature VDS -60 V P-Channel RDS(on) 8 Enhancement mode ID -0.17 A Logic Level PG-SOT-23 Avalanche rated 3 dv/dt rated 2 1 VPS05161 Tape and Reel Type Package Marking Drain BSS 84 P PG-SOT-23 L6327:3000pcs/r. YBs pin 3 Gate BSS 84 P PG-SOT-23 L6433:10000pcs/r. YBs pin1 Source pin 2 Maximum Ratings, at TA = 25

5.13. bss84pw rev1.4.pdf Size:120K _infineon

BSS84PW SIPMOS? Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance 8 RDS(on) Avalanche rated Continuous drain current -0.15 A ID Logic Level 3 dv/dt rated 2 • Qualified according to AEC Q101 1 VSO05561 • Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking Pin 1 PIN

5.14. bss84p.pdf Size:97K _infineon

Preliminary data BSS 84 P SIPMOS? Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 8 Avalanche rated Continuous drain current ID -0.17 A Logic Level 3 dv/dt rated 2 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 BSS 84 P SOT-23 Q67041-S1417 YBs G S D Maximum R

5.15. bss84lt1-d.pdf Size:67K _onsemi

BSS84LT1 Power MOSFET 130 mA, 50 V P-Channel SOT-23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power http://onsemi.com management circuitry. Typical applications are DC-DC converters, load switching, power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones

5.16. bss84z.pdf Size:160K _utc

UNISONIC TECHNOLOGIES CO., LTD BSS84Z Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage app

5.17. bss84.pdf Size:297K _gsme

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. BSS84 SOT-23 ??????(SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P

5.18. bss84w.pdf Size:793K _wietron

BSS84W P-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 Description: * These miniature surface mount MOSFETs reduce power loss SOT-323(SC-70) conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered 3 DRAIN products such as computers, printers, ce

5.19. bss84.pdf Size:131K _wietron

BSS84 Small Signal MOSFET P-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 10 GATE 1 *Low Input Capacitance: 30PF 2 *Low Out put Capacitance : 10PF 2 SOURCE *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unl

5.20. bss84wt1.pdf Size:377K _willas

FM120-M WILLAS THRU BSS84WT1 Power MOSFET mAmps, 50 Voits mAmps, 50 Voits 130 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in or

5.21. bss84lt1.pdf Size:381K _willas

FM120-M WILLAS BSS84LT1 THRU mAmps, 50 Voits Power MOSFET 130 BARRIER RECTIFIERS -20V- 200V FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize b

5.22. bss84n3.pdf Size:301K _cystek

Spec. No. : C465N3 Issued Date : 2009.03.03 CYStech Electronics Corp. Revised Date : 2012.05.18 Page No. : 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50V BSS84N3 ID -130mA RDSON@VGS=-5V, ID=-100mA 6Ω(typ) Features • Low gate charge • Excellent thermal and electrical capabilities • Pb-free package Equivalent Circuit Outline BSS84N3 SOT-23 D G：Gate

5.23. bss84s6r.pdf Size:299K _cystek

Spec. No. : C465S6R Issued Date : 2012.12.25 CYStech Electronics Corp. Revised Date : Page No. : 1/ 8 Dual P-Channel MOSFET BVDSS -50V BSS84S6R ID -170mA RDSON@VGS=-10V, ID=-100mA 5Ω (typ) RDSON@VGS=-5V, ID=-100mA 6Ω (typ) Features RDSON@VGS=-3V, ID=-30mA 8Ω (typ) • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(-2.5V) â€

5.24. bss84ks3.pdf Size:305K _cystek

Spec. No. : C465S3 Issued Date : 2012.05.19 CYStech Electronics Corp. Revised Date : 2013.09.09 Page No. : 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50V BSS84KS3 ID -170mA 8Ω (MAX) RDSON@-10V 10Ω (MAX) RDSON@-5V 12Ω (MAX) RDSON@-4V Features 32Ω (MAX) RDSON@-2.5V • Low gate charge • Excellent thermal and electrical capabilities • Pb-

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