BUK6210-55C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK6210-55C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 128 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 V
   Qgⓘ - Carga de la puerta: 63 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0096 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET BUK6210-55C

BUK6210-55C Datasheet (PDF)

..1. Size:357K philips
buk6210-55c.pdf

BUK6210-55CN-channel TrenchMOS intermediate level FETRev. 2 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

8.1. Size:364K philips
buk6218-40c.pdf

BUK6218-40CN-channel TrenchMOS intermediate level FETRev. 1 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a

8.2. Size:180K philips
buk6212-40c.pdf

BUK6212-40CN-channel TrenchMOS intermediate level FETRev. 2 21 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica

8.3. Size:171K philips
buk6213-30c.pdf

BUK6213-30CN-channel TrenchMOS intermediate level FETRev. 01 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

8.4. Size:201K philips
buk6217-55c.pdf

BUK6217-55CN-channel TrenchMOS intermediate level FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

8.5. Size:211K philips
buk6211-75c.pdf

BUK6211-75CN-channel TrenchMOS FETRev. 02 28 September 2010 Product data sheet1. Product profile1.1 General descriptionStandard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performan

8.6. Size:218K philips
buk6215-75c.pdf

BUK6215-75CN-channel TrenchMOS FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance

8.7. Size:695K nxp
buk6213-30a.pdf

BUK6213-30AN-channel TrenchMOS intermediate level FETRev. 03 2 February 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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