BUK6210-55C Specs and Replacement
Type Designator: BUK6210-55C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 128 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 78 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
Package: DPAK
BUK6210-55C substitution
- MOSFET ⓘ Cross-Reference Search
BUK6210-55C datasheet
buk6210-55c.pdf
BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒
buk6218-40c.pdf
BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a... See More ⇒
buk6212-40c.pdf
BUK6212-40C N-channel TrenchMOS intermediate level FET Rev. 2 21 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica... See More ⇒
buk6213-30c.pdf
BUK6213-30C N-channel TrenchMOS intermediate level FET Rev. 01 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒
Detailed specifications: BSS84AKS, BSS84AKT, BSS84AKV, BSS84AKW, BSS87, BST82, BUK6207-55C, BUK6209-30C, IRFZ46N, BUK6211-75C, BUK6212-40C, BUK6213-30A, BUK6213-30C, BUK6215-75C, BUK6217-55C, BUK6218-40C, BUK6226-75C
Keywords - BUK6210-55C MOSFET specs
BUK6210-55C cross reference
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