BUK6507-75C Todos los transistores

 

BUK6507-75C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK6507-75C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 204 W
   Voltaje máximo drenador - fuente |Vds|: 75 V
   Voltaje máximo fuente - puerta |Vgs|: 16 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.8 V
   Carga de la puerta (Qg): 123 nC
   Resistencia entre drenaje y fuente RDS(on): 0.0076 Ohm
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de MOSFET BUK6507-75C

 

BUK6507-75C Datasheet (PDF)

 ..1. Size:176K  philips
buk6507-75c.pdf

BUK6507-75C
BUK6507-75C

BUK6507-75CN-channel TrenchMOS FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo

 6.1. Size:185K  philips
buk6507-55c.pdf

BUK6507-75C
BUK6507-75C

BUK6507-55CN-channel TrenchMOS logic and standard level FETRev. 01 12 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in

 9.1. Size:369K  philips
buk652r7-30c.pdf

BUK6507-75C
BUK6507-75C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.2. Size:202K  philips
buk655r0-75c.pdf

BUK6507-75C
BUK6507-75C

BUK655R0-75CN-channel TrenchMOS FETRev. 02 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance auto

 9.3. Size:182K  philips
buk653r2-55c.pdf

BUK6507-75C
BUK6507-75C

BUK653R2-55CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.4. Size:364K  philips
buk653r5-55c.pdf

BUK6507-75C
BUK6507-75C

BUK653R5-55CN-channel TrenchMOS intermediate level FETRev. 1 27 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.5. Size:187K  philips
buk654r6-55c.pdf

BUK6507-75C
BUK6507-75C

BUK654R6-55CN-channel TrenchMOS intermediate level FETRev. 02 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicati

 9.6. Size:375K  philips
buk652r3-40c.pdf

BUK6507-75C
BUK6507-75C

BUK652R3-40CN-channel TrenchMOS intermediate level FETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.7. Size:213K  philips
buk6510-75c.pdf

BUK6507-75C
BUK6507-75C

BUK6510-75CN-channel TrenchMOS FETRev. 02 13 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performanc

 9.8. Size:368K  philips
buk653r7-30c.pdf

BUK6507-75C
BUK6507-75C

BUK653R7-30CN-channel TrenchMOS intermediate level FETRev. 3 13 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.9. Size:177K  philips
buk654r0-75c.pdf

BUK6507-75C
BUK6507-75C

BUK654R0-75CN-channel TrenchMOS FETRev. 03 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

 9.10. Size:183K  philips
buk652r0-30c.pdf

BUK6507-75C
BUK6507-75C

BUK652R0-30CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.11. Size:194K  philips
buk654r8-40c.pdf

BUK6507-75C
BUK6507-75C

BUK654R8-40CN-channel TrenchMOS intermediate level FETRev. 03 12 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.12. Size:349K  philips
buk652r6-40c.pdf

BUK6507-75C
BUK6507-75C

BUK652R6-40CN-channel TrenchMOS FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

 9.13. Size:369K  nxp
buk652r7-30c.pdf

BUK6507-75C
BUK6507-75C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top

 


BUK6507-75C
  BUK6507-75C
  BUK6507-75C
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top