All MOSFET. BUK6507-75C Datasheet

 

BUK6507-75C MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK6507-75C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 204 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.8 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 123 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0076 Ohm

Package: TO220AB

BUK6507-75C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK6507-75C Datasheet (PDF)

1.1. buk6507-75c.pdf Size:176K _philips

BUK6507-75C
BUK6507-75C

BUK6507-75C N-channel TrenchMOS FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive

2.1. buk6507-55c.pdf Size:185K _philips

BUK6507-75C
BUK6507-75C

BUK6507-55C N-channel TrenchMOS logic and standard level FET Rev. 01 12 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 5.1. buk652r7-30c.pdf Size:369K _update_mosfet

BUK6507-75C
BUK6507-75C

BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

5.2. buk654r0-75c.pdf Size:177K _philips

BUK6507-75C
BUK6507-75C

BUK654R0-75C N-channel TrenchMOS FET Rev. 03 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automoti

 5.3. buk654r8-40c.pdf Size:194K _philips

BUK6507-75C
BUK6507-75C

BUK654R8-40C N-channel TrenchMOS intermediate level FET Rev. 03 12 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perf

5.4. buk652r6-40c.pdf Size:349K _philips

BUK6507-75C
BUK6507-75C

BUK652R6-40C N-channel TrenchMOS FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automoti

 5.5. buk652r0-30c.pdf Size:183K _philips

BUK6507-75C
BUK6507-75C

BUK652R0-30C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

5.6. buk6510-75c.pdf Size:213K _philips

BUK6507-75C
BUK6507-75C

BUK6510-75C N-channel TrenchMOS FET Rev. 02 13 December 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

5.7. buk652r3-40c.pdf Size:375K _philips

BUK6507-75C
BUK6507-75C

BUK652R3-40C N-channel TrenchMOS intermediate level FET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor

5.8. buk652r7-30c.pdf Size:369K _philips

BUK6507-75C
BUK6507-75C

BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

5.9. buk655r0-75c.pdf Size:202K _philips

BUK6507-75C
BUK6507-75C

BUK655R0-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotiv

5.10. buk653r2-55c.pdf Size:182K _philips

BUK6507-75C
BUK6507-75C

BUK653R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

5.11. buk653r7-30c.pdf Size:368K _philips

BUK6507-75C
BUK6507-75C

BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 3 13 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfo

5.12. buk654r6-55c.pdf Size:187K _philips

BUK6507-75C
BUK6507-75C

BUK654R6-55C N-channel TrenchMOS intermediate level FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

5.13. buk653r5-55c.pdf Size:364K _philips

BUK6507-75C
BUK6507-75C

BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev. 1 27 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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