BUK652R1-30C Todos los transistores

 

BUK652R1-30C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK652R1-30C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 263 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 V
   Qgⓘ - Carga de la puerta: 168 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: TO220AB
 

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BUK652R1-30C Datasheet (PDF)

 7.1. Size:369K  philips
 buk652r7-30c.pdf pdf_icon

BUK652R1-30C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:375K  philips
 buk652r3-40c.pdf pdf_icon

BUK652R1-30C

BUK652R3-40CN-channel TrenchMOS intermediate level FETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.3. Size:183K  philips
 buk652r0-30c.pdf pdf_icon

BUK652R1-30C

BUK652R0-30CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.4. Size:349K  philips
 buk652r6-40c.pdf pdf_icon

BUK652R1-30C

BUK652R6-40CN-channel TrenchMOS FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

MOSTRAR MÁS

Otros transistores... BUK624R5-30C , BUK625R0-40C , BUK625R2-30C , BUK626R2-40C , BUK6507-55C , BUK6507-75C , BUK6510-75C , BUK652R0-30C , IRF840 , BUK652R3-40C , BUK652R6-40C , BUK653R2-55C , BUK653R3-30C , BUK653R4-40C , BUK653R5-55C , BUK653R7-30C , BUK654R0-75C .

History: APM4550K | MDIS1903TH | STW40N95K5

 

 
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