Справочник MOSFET. BUK652R1-30C

 

BUK652R1-30C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK652R1-30C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 263 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TO220AB
 

 Аналог (замена) для BUK652R1-30C

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK652R1-30C Datasheet (PDF)

 7.1. Size:369K  philips
 buk652r7-30c.pdf pdf_icon

BUK652R1-30C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:375K  philips
 buk652r3-40c.pdf pdf_icon

BUK652R1-30C

BUK652R3-40CN-channel TrenchMOS intermediate level FETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.3. Size:183K  philips
 buk652r0-30c.pdf pdf_icon

BUK652R1-30C

BUK652R0-30CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.4. Size:349K  philips
 buk652r6-40c.pdf pdf_icon

BUK652R1-30C

BUK652R6-40CN-channel TrenchMOS FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK624R5-30C , BUK625R0-40C , BUK625R2-30C , BUK626R2-40C , BUK6507-55C , BUK6507-75C , BUK6510-75C , BUK652R0-30C , IRF840 , BUK652R3-40C , BUK652R6-40C , BUK653R2-55C , BUK653R3-30C , BUK653R4-40C , BUK653R5-55C , BUK653R7-30C , BUK654R0-75C .

History: STQ1NK60ZR-AP | STW265N6F6AG

 

 
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