Справочник MOSFET. BUK652R1-30C

 

BUK652R1-30C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK652R1-30C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 263 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TO220AB
     - подбор MOSFET транзистора по параметрам

 

BUK652R1-30C Datasheet (PDF)

 7.1. Size:369K  philips
 buk652r7-30c.pdf pdf_icon

BUK652R1-30C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:375K  philips
 buk652r3-40c.pdf pdf_icon

BUK652R1-30C

BUK652R3-40CN-channel TrenchMOS intermediate level FETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.3. Size:183K  philips
 buk652r0-30c.pdf pdf_icon

BUK652R1-30C

BUK652R0-30CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.4. Size:349K  philips
 buk652r6-40c.pdf pdf_icon

BUK652R1-30C

BUK652R6-40CN-channel TrenchMOS FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

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History: P9006EVG | FDB070AN06A0 | CEM2401 | IRFS252 | IRFS142 | IRFU9222 | BUK7608-40B

 

 
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