BUK663R5-55C Todos los transistores

 

BUK663R5-55C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK663R5-55C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 263 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: D2PAK

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BUK663R5-55C datasheet

 ..1. Size:219K  philips
 buk663r5-55c.pdf pdf_icon

BUK663R5-55C

BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 5.1. Size:201K  philips
 buk663r5-30c.pdf pdf_icon

BUK663R5-55C

BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 5.2. Size:769K  nxp
 buk663r5-30c.pdf pdf_icon

BUK663R5-55C

BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.1. Size:360K  philips
 buk663r7-75c.pdf pdf_icon

BUK663R5-55C

BUK663R7-75C N-channel TrenchMOS FET Rev. 2 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

MOSTRAR MÁS

Otros transistores... BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , BUK663R2-40C , BUK663R5-30C , IRFP250N , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C , BUK6E2R3-40C , BUK6E3R2-55C .

 

 

 

 

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