BUK663R5-55C PDF and Equivalents Search

 

BUK663R5-55C Specs and Replacement

Type Designator: BUK663R5-55C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 263 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: D2PAK

BUK663R5-55C substitution

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BUK663R5-55C datasheet

 ..1. Size:219K  philips
 buk663r5-55c.pdf pdf_icon

BUK663R5-55C

BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒

 5.1. Size:201K  philips
 buk663r5-30c.pdf pdf_icon

BUK663R5-55C

BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒

 5.2. Size:769K  nxp
 buk663r5-30c.pdf pdf_icon

BUK663R5-55C

BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒

 7.1. Size:360K  philips
 buk663r7-75c.pdf pdf_icon

BUK663R5-55C

BUK663R7-75C N-channel TrenchMOS FET Rev. 2 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut... See More ⇒

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Detailed specifications: BUK661R6-30C, BUK661R8-30C, BUK661R9-40C, BUK662R4-40C, BUK662R5-30C, BUK662R7-55C, BUK663R2-40C, BUK663R5-30C, IRFP250N, BUK663R7-75C, BUK664R4-55C, BUK664R6-40C, BUK664R8-75C, BUK6C1R5-40C, BUK6E2R0-30C, BUK6E2R3-40C, BUK6E3R2-55C

Keywords - BUK663R5-55C MOSFET specs

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