BUK664R8-75C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK664R8-75C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 263 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: D2PAK
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BUK664R8-75C Datasheet (PDF)
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BUK664R4-55CN-channel TrenchMOS intermediate level FETRev. 03 21 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat
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Otros transistores... BUK662R5-30C , BUK662R7-55C , BUK663R2-40C , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , 8205A , BUK6C1R5-40C , BUK6E2R0-30C , BUK6E2R3-40C , BUK6E3R2-55C , BUK6E3R4-40C , BUK6E4R0-75C , BUK7105-40AIE , BUK7105-40ATE .
History: TPC8119 | SWF3N80D | FTK4N60D | CS10N70FA9R | 2SK3134 | MS6N80 | 2SK3012
History: TPC8119 | SWF3N80D | FTK4N60D | CS10N70FA9R | 2SK3134 | MS6N80 | 2SK3012



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