BUK664R8-75C MOSFET. Datasheet pdf. Equivalent

BUK664R8-75C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUK664R8-75C Datasheet (PDF)

3.1. buk664r4-55c.pdf Size:216K _philips

BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 03 � 21 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

5.1. buk661r8-30c.pdf Size:395K _philips

BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 02 � 28 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

5.2. buk663r5-55c.pdf Size:219K _philips

BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 � 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perf

 5.3. buk661r9-40c.pdf Size:371K _philips

BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 � 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor

5.4. buk6607-75c.pdf Size:358K _philips

BUK6607-75C N-channel TrenchMOS FET Rev. 2 � 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive

 5.5. buk663r5-30c.pdf Size:201K _philips

BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 � 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

5.6. buk662r7-55c.pdf Size:180K _philips

BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 � 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

5.7. buk663r7-75c.pdf Size:360K _philips

BUK663R7-75C N-channel TrenchMOS FET Rev. 2 � 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automoti

5.8. buk6610-75c.pdf Size:198K _philips

BUK6610-75C N-channel TrenchMOS FET Rev. 02 � 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive

5.9. buk663r2-40c.pdf Size:374K _philips

BUK663R2-40C N-channel TrenchMOS intermediate level FET Rev. 2 � 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfo

5.10. buk662r5-30c.pdf Size:353K _philips

BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 � 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfo

5.11. buk6607-55c.pdf Size:355K _philips

BUK6607-55C N-channel TrenchMOS logic and standard level FET Rev. 1 � 14 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in

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MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |