BUK664R8-75C MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK664R8-75C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 263 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.8 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 177 nC
Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm
Package: D2PAK
BUK664R8-75C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK664R8-75C Datasheet (PDF)
3.1. buk664r4-55c.pdf 
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BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 03 21 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
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5.2. buk6607-75c.pdf Size:358K _philips
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5.3. buk662r7-55c.pdf Size:180K _philips
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5.4. buk663r5-55c.pdf Size:219K _philips
BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perf
5.5. buk6607-55c.pdf Size:355K _philips
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5.6. buk663r2-40c.pdf Size:374K _philips
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5.7. buk663r7-75c.pdf Size:360K _philips
BUK663R7-75C N-channel TrenchMOS FET Rev. 2 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automoti
5.8. buk661r8-30c.pdf Size:395K _philips
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5.9. buk662r5-30c.pdf Size:353K _philips
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5.11. buk661r9-40c.pdf Size:371K _philips
BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
