BUK7107-55AIE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK7107-55AIE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 272 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET BUK7107-55AIE

BUK7107-55AIE Datasheet (PDF)

..1. Size:326K philips
buk7107-55aie buk7907-55aie.pdf

BUK71/7907-55AIETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7107-55AIE in SOT426 (D2-PAK)BUK

6.1. Size:346K philips
buk7107-40atc buk7907-40atc.pdf

BUK71/7907-40ATCTrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUSdiodes for clamping, (ESD) protection and temperature sensing.Product availability:BUK7107-40ATC in SOT42

8.1. Size:346K philips
buk7109-75ate buk7909-75ate.pdf

BUK71/7909-75ATETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and a TrenchPLUSdiode for temperature sensing.Product availability:BUK7109-75ATE in SOT426 (D2-PAK)BUK7909-75ATE

8.2. Size:143K philips
buk7105-40aie buk7905-40aie.pdf

BUK71/7905-40AIETrenchPLUS standard level FETRev. 04 6 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c

8.3. Size:331K philips
buk7109-75aie buk7909-75aie.pdf

BUK71/7909-75AIETrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7109-75AIE in SOT426 (D2-PAK)BUK7

8.4. Size:341K philips
buk7105-40ate buk7905-40ate.pdf

BUK71/7905-40ATETrenchPLUS standard level FETRev. 01 20 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring both very low on-state resistance andTrenchPLUS diodes for temperature sensing and ESD protection.Product availability:BUK7105-40ATE in SOT426 (

8.5. Size:332K philips
buk7108-40aie buk7908-40aie.pdf

BUK71/7908-40AIETrenchPLUS standard level FETRev. 02 24 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c

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