All MOSFET. BUK7107-55AIE Datasheet

 

BUK7107-55AIE MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK7107-55AIE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 272 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Drain Current |Id|: 75 A

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: D2PAK

BUK7107-55AIE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7107-55AIE Datasheet (PDF)

1.1. buk7107-55aie buk7907-55aie.pdf Size:326K _philips

BUK7107-55AIE
BUK7107-55AIE

BUK71/7907-55AIE TrenchPLUS standard level FET Rev. 01 — 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability: BUK7107-55AIE in SOT426 (D2-PAK) BUK7907-55

2.1. buk7107-40atc buk7907-40atc.pdf Size:346K _philips

BUK7107-55AIE
BUK7107-55AIE

BUK71/7907-40ATC TrenchPLUS standard level FET Rev. 01 — 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS diodes for clamping, (ESD) protection and temperature sensing. Product availability: BUK7107-40ATC in SOT426 (D2-P

4.1. buk7109-75aie buk7909-75aie.pdf Size:331K _philips

BUK7107-55AIE
BUK7107-55AIE

BUK71/7909-75AIE TrenchPLUS standard level FET Rev. 01 — 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability: BUK7109-75AIE in SOT426 (D2-PAK) BUK7909-75A

4.2. buk7105-40aie buk7905-40aie.pdf Size:143K _philips

BUK7107-55AIE
BUK7107-55AIE

BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 04 — 6 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. 1.2 Features ESD protection Q101 compliant Integrated current

4.3. buk7108-40aie buk7908-40aie.pdf Size:332K _philips

BUK7107-55AIE
BUK7107-55AIE

BUK71/7908-40AIE TrenchPLUS standard level FET Rev. 02 — 24 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. 1.2 Features ESD protection Q101 compliant Integrated current

4.4. buk7109-75ate buk7909-75ate.pdf Size:346K _philips

BUK7107-55AIE
BUK7107-55AIE

BUK71/7909-75ATE TrenchPLUS standard level FET Rev. 01 — 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance and a TrenchPLUS diode for temperature sensing. Product availability: BUK7109-75ATE in SOT426 (D2-PAK) BUK7909-75ATE in SOT2

4.5. buk7105-40ate buk7905-40ate.pdf Size:341K _philips

BUK7107-55AIE
BUK7107-55AIE

BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring both very low on-state resistance and TrenchPLUS diodes for temperature sensing and ESD protection. Product availability: BUK7105-40ATE in SOT426 (D2-PAK)

Datasheet: BUK6E2R0-30C , BUK6E2R3-40C , BUK6E3R2-55C , BUK6E3R4-40C , BUK6E4R0-75C , BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC , BUZ90 , BUK7107-55ATE , BUK7108-40AIE , BUK7109-75AIE , BUK7109-75ATE , BUK714R1-40BT , BUK7207-30B , BUK7208-40B , BUK7210-55B .

 


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