BUK724R5-30C Todos los transistores

 

BUK724R5-30C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK724R5-30C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 157 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 62 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de MOSFET BUK724R5-30C

 

BUK724R5-30C Datasheet (PDF)

 8.1. Size:284K  philips
buk7240-100a 01.pdf

BUK724R5-30C
BUK724R5-30C

BUK7240-100ATrenchMOS standard level FETRev. 01 03 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7240-100A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated St

 8.2. Size:882K  nxp
buk7240-100a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7240-100AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.

 9.1. Size:214K  philips
buk725r0-40c.pdf

BUK724R5-30C
BUK724R5-30C

BUK725R0-40CN-channel TrenchMOS standard level FETRev. 01 23 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance au

 9.2. Size:193K  philips
buk7226-75a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7226-75AN-channel TrenchMOS standard level FETRev. 02 22 February 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in

 9.3. Size:111K  philips
buk7213-40a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications

 9.4. Size:191K  philips
buk7210-55b.pdf

BUK724R5-30C
BUK724R5-30C

BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in

 9.5. Size:284K  philips
buk7219-55a 01.pdf

BUK724R5-30C
BUK724R5-30C

BUK7219-55ATrenchMOS standard level FETRev. 01 02 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan

 9.6. Size:282K  philips
buk7275-100a 01.pdf

BUK724R5-30C
BUK724R5-30C

BUK7275-100ATrenchMOS standard level FETRev. 01 25 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7275-100A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated St

 9.7. Size:277K  philips
buk7230-55a 01.pdf

BUK724R5-30C
BUK724R5-30C

BUK7230-55ATrenchMOS standard level FETRev. 01 29 September 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7230-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated St

 9.8. Size:283K  philips
buk7226-75a 01.pdf

BUK724R5-30C
BUK724R5-30C

BUK7226-75ATrenchMOS standard level FETRev. 01 09 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7226-75A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan

 9.9. Size:113K  philips
buk7213 40a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications

 9.10. Size:822K  nxp
buk7215-55a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7215-55AN-channel TrenchMOS standard level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

 9.11. Size:892K  nxp
buk7227-100b.pdf

BUK724R5-30C
BUK724R5-30C

BUK7227-100BN-channel TrenchMOS standard level FETRev. 02 17 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1

 9.12. Size:870K  nxp
buk7219-55a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7219-55AN-channel TrenchMOS standard level FETRev. 02 3 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

 9.13. Size:1130K  nxp
buk7237-55a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7237-55AN-channel TrenchMOS standard level FETRev. 02 9 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fea

 9.14. Size:726K  nxp
buk7277-55a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7277-55AN-channel TrenchMOS standard level FET12 June 2014 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 co

 9.15. Size:930K  nxp
buk7275-100a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7275-100AN-channel TrenchMOS standard level FETRev. 02 17 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

 9.16. Size:726K  nxp
buk7210-55b.pdf

BUK724R5-30C
BUK724R5-30C

BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u

 9.17. Size:802K  nxp
buk7222-55a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7222-55AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

 9.18. Size:825K  nxp
buk7225-55a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7225-55AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

 9.19. Size:739K  nxp
buk7230-55a.pdf

BUK724R5-30C
BUK724R5-30C

BUK7230-55AN-channel TrenchMOS standard level FETRev. 02 16 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

 9.20. Size:816K  nxp
buk7208-40b.pdf

BUK724R5-30C
BUK724R5-30C

BUK7208-40BN-channel TrenchMOS standard level FETRev. 03 7 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fea

 9.21. Size:956K  nxp
buk72150-55a.pdf

BUK724R5-30C
BUK724R5-30C

BUK72150-55AN-channel TrenchMOS standard level FETRev. 03 26 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


BUK724R5-30C
  BUK724R5-30C
  BUK724R5-30C
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top