BUK724R5-30C Todos los transistores

 8.1. Size:284K  philips
 buk7240-100a 01.pdf

BUK7240-100A TrenchMOS standard level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7240-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated St

 8.2. Size:882K  nxp
 buk7240-100a.pdf

BUK7240-100A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.

 9.1. Size:214K  philips
 buk725r0-40c.pdf

BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance au

 9.2. Size:193K  philips
 buk7226-75a.pdf

BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in

 9.3. Size:111K  philips
 buk7213-40a.pdf

BUK7213-40A TrenchMOS standard level FET Rev. 01 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible 1.3 Applications

 9.4. Size:191K  philips
 buk7210-55b.pdf

BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in

 9.5. Size:284K  philips
 buk7219-55a 01.pdf

BUK7219-55A TrenchMOS standard level FET Rev. 01 02 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7219-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Stan

 9.6. Size:282K  philips
 buk7275-100a 01.pdf

BUK7275-100A TrenchMOS standard level FET Rev. 01 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7275-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated St

 9.7. Size:277K  philips
 buk7230-55a 01.pdf

BUK7230-55A TrenchMOS standard level FET Rev. 01 29 September 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7230-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated St

 9.8. Size:283K  philips
 buk7226-75a 01.pdf

BUK7226-75A TrenchMOS standard level FET Rev. 01 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7226-75A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Stan

 9.9. Size:113K  philips
 buk7213 40a.pdf

BUK7213-40A TrenchMOS standard level FET Rev. 01 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible 1.3 Applications

 9.10. Size:822K  nxp
 buk7215-55a.pdf

BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 9.11. Size:892K  nxp
 buk7227-100b.pdf

BUK7227-100B N-channel TrenchMOS standard level FET Rev. 02 17 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1

 9.12. Size:870K  nxp
 buk7219-55a.pdf

BUK7219-55A N-channel TrenchMOS standard level FET Rev. 02 3 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 9.13. Size:1130K  nxp
 buk7237-55a.pdf

BUK7237-55A N-channel TrenchMOS standard level FET Rev. 02 9 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fea

 9.14. Size:726K  nxp
 buk7277-55a.pdf

BUK7277-55A N-channel TrenchMOS standard level FET 12 June 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 co

 9.15. Size:930K  nxp
 buk7275-100a.pdf

BUK7275-100A N-channel TrenchMOS standard level FET Rev. 02 17 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F

 9.16. Size:726K  nxp
 buk7210-55b.pdf

BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u

 9.17. Size:802K  nxp
 buk7222-55a.pdf

BUK7222-55A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 9.18. Size:825K  nxp
 buk7225-55a.pdf

BUK7225-55A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 9.19. Size:739K  nxp
 buk7230-55a.pdf

BUK7230-55A N-channel TrenchMOS standard level FET Rev. 02 16 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F

 9.20. Size:816K  nxp
 buk7208-40b.pdf

BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fea

 9.21. Size:956K  nxp
 buk72150-55a.pdf

BUK72150-55A N-channel TrenchMOS standard level FET Rev. 03 26 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.