BUK724R5-30C PDF and Equivalents Search

 

BUK724R5-30C Specs and Replacement

Type Designator: BUK724R5-30C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 157 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: DPAK

BUK724R5-30C substitution

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BUK724R5-30C datasheet

 8.1. Size:284K  philips
buk7240-100a 01.pdf pdf_icon

BUK724R5-30C

BUK7240-100A TrenchMOS standard level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7240-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated St... See More ⇒

 8.2. Size:882K  nxp
buk7240-100a.pdf pdf_icon

BUK724R5-30C

BUK7240-100A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.... See More ⇒

 9.1. Size:214K  philips
buk725r0-40c.pdf pdf_icon

BUK724R5-30C

BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance au... See More ⇒

 9.2. Size:193K  philips
buk7226-75a.pdf pdf_icon

BUK724R5-30C

BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in ... See More ⇒

Detailed specifications: BUK7219-55A, BUK7222-55A, BUK7225-55A, BUK7226-75A, BUK7227-100B, BUK7230-55A, BUK7237-55A, BUK7240-100A, IRF1407, BUK725R0-40C, BUK7275-100A, BUK7277-55A, BUK7504-40A, BUK7506-55A, BUK7506-55B, BUK7506-75B, BUK7507-30B

Keywords - BUK724R5-30C MOSFET specs

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