BUK7506-75B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7506-75B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de BUK7506-75B MOSFET
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BUK7506-75B datasheet
buk7506-75b buk7606-75b.pdf
BUK75/7606-75B TrenchMOS standard level FET Rev. 02 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-stat
buk7506-55a buk7606-55a.pdf
BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10
buk7506-55a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7506-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology which features ID Drain current (DC) 75 A very low on-state resis
buk7506-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7506-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 75 A features very low on-state
Otros transistores... BUK7240-100A , BUK724R5-30C , BUK725R0-40C , BUK7275-100A , BUK7277-55A , BUK7504-40A , BUK7506-55A , BUK7506-55B , 18N50 , BUK7507-30B , BUK7507-55B , BUK7508-40B , BUK7508-55A , BUK7509-55A , BUK7509-75A , BUK7510-100B , BUK7510-55AL .
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