BUK7606-55B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7606-55B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 254 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: D2PAK

 Búsqueda de reemplazo de BUK7606-55B MOSFET

- Selecciónⓘ de transistores por parámetros

 

BUK7606-55B datasheet

 ..1. Size:941K  nxp
 buk7606-55b.pdf pdf_icon

BUK7606-55B

BUK7606-55B N-channel TrenchMOS standard level FET Rev. 02 21 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe

 4.1. Size:320K  philips
 buk7506-55a buk7606-55a.pdf pdf_icon

BUK7606-55B

BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10

 4.2. Size:56K  philips
 buk7606-55a 1.pdf pdf_icon

BUK7606-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev

 4.3. Size:910K  nxp
 buk7606-55a.pdf pdf_icon

BUK7606-55B

BUK7606-55A N-channel TrenchMOS standard level FET Rev. 03 1 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

MOSTRAR MÁS

Otros transistores... BUK754R0-55B, BUK754R3-40B, BUK754R3-75C, BUK755R2-40B, BUK7575-100A, BUK7575-55A, BUK7604-40A, BUK7606-55A, IRF540, BUK7606-75B, BUK7607-30B, BUK7607-55B, BUK7608-40B, BUK7608-55A, BUK7609-55A, BUK7609-75A, BUK7610-100B