BUK7606-55B PDF and Equivalents Search

 

BUK7606-55B Specs and Replacement

Type Designator: BUK7606-55B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 254 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: D2PAK

BUK7606-55B substitution

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BUK7606-55B datasheet

 ..1. Size:941K  nxp
 buk7606-55b.pdf pdf_icon

BUK7606-55B

BUK7606-55B N-channel TrenchMOS standard level FET Rev. 02 21 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe... See More ⇒

 4.1. Size:320K  philips
 buk7506-55a buk7606-55a.pdf pdf_icon

BUK7606-55B

BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10... See More ⇒

 4.2. Size:56K  philips
 buk7606-55a 1.pdf pdf_icon

BUK7606-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev... See More ⇒

 4.3. Size:910K  nxp
 buk7606-55a.pdf pdf_icon

BUK7606-55B

BUK7606-55A N-channel TrenchMOS standard level FET Rev. 03 1 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒

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Detailed specifications: BUK754R0-55B , BUK754R3-40B , BUK754R3-75C , BUK755R2-40B , BUK7575-100A , BUK7575-55A , BUK7604-40A , BUK7606-55A , IRF540 , BUK7606-75B , BUK7607-30B , BUK7607-55B , BUK7608-40B , BUK7608-55A , BUK7609-55A , BUK7609-75A , BUK7610-100B .

History: SPI70N10L

Keywords - BUK7606-55B MOSFET specs

 BUK7606-55B cross reference
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