BUK761R8-30C Todos los transistores

 

BUK761R8-30C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK761R8-30C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: D2PAK
     - Selección de transistores por parámetros

 

BUK761R8-30C Datasheet (PDF)

 ..1. Size:203K  philips
buk761r8-30c.pdf pdf_icon

BUK761R8-30C

BUK761R8-30CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technol

 7.1. Size:257K  nxp
buk761r5-40e.pdf pdf_icon

BUK761R8-30C

BUK761R5-40EN-channel TrenchMOS standard level FET7 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated

 7.2. Size:250K  nxp
buk761r7-40e.pdf pdf_icon

BUK761R8-30C

BUK761R7-40EN-channel TrenchMOS standard level FET4 June 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated

 7.3. Size:235K  nxp
buk761r3-30e.pdf pdf_icon

BUK761R8-30C

BUK761R3-30EN-channel TrenchMOS standard level FETRev. 3 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant

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History: BLP042N10G-P | FQA5N90 | FQA11N90CF109

 

 
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History: BLP042N10G-P | FQA5N90 | FQA11N90CF109

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