BUK7628-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7628-55A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 99 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: D2PAK

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BUK7628-55A datasheet

 ..1. Size:96K  philips
 buk7528-55a buk7628-55a.pdf pdf_icon

BUK7628-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using trench tec

 4.1. Size:56K  philips
 buk7628-55 2.pdf pdf_icon

BUK7628-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7628-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 40 A trench technology the devi

 6.1. Size:80K  philips
 buk7528 buk7628-100a.pdf pdf_icon

BUK7628-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using trench

 6.2. Size:722K  nxp
 buk7628-100a.pdf pdf_icon

BUK7628-55A

BUK7628-100A N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F

MOSTRAR MÁS

Otros transistores... BUK7619-100B, BUK761R8-30C, BUK7620-100A, BUK7620-55A, BUK7623-75A, BUK7624-55A, BUK7626-100B, BUK7628-100A, IRF9540, BUK762R0-40C, BUK762R7-30B, BUK7635-100A, BUK7635-55A, BUK763R1-40B, BUK763R4-30B, BUK763R6-40C, BUK7640-100A