All MOSFET. BUK7628-55A Datasheet

 

BUK7628-55A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK7628-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 99 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: D2PAK

 BUK7628-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7628-55A Datasheet (PDF)

 ..1. Size:96K  philips
buk7528-55a buk7628-55a.pdf

BUK7628-55A
BUK7628-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 41 AUsing trench tec

 4.1. Size:56K  philips
buk7628-55 2.pdf

BUK7628-55A
BUK7628-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7628-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 40 Atrench technology the devi

 6.1. Size:80K  philips
buk7528 buk7628-100a.pdf

BUK7628-55A
BUK7628-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 47 AUsing trench

 6.2. Size:722K  nxp
buk7628-100a.pdf

BUK7628-55A
BUK7628-55A

BUK7628-100AN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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