BUK7635-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK7635-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET BUK7635-55A

BUK7635-55A Datasheet (PDF)

..1. Size:313K philips
buk7535-55a buk7635-55a.pdf

BUK7535-55A; BUK7635-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7535-55A in SOT78 (TO-220AB)BUK7635-55A in SOT404 (D 2-PAK).2. Features TrenchMOS te

..2. Size:760K nxp
buk7635-55a.pdf

BUK7635-55AN-channel TrenchMOS standard level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

4.1. Size:55K philips
buk7635-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7635-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 34 Atrench technology the devi

6.1. Size:337K philips
buk7535-100a buk7635-100a.pdf

BUK7535-100A;BUK7635-100ATrenchMOS standard level FETRev. 01 02 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7535-100A in SOT78 (TO-220AB)BUK7635-100A in SOT404 (D2-PAK).2. Features TrenchMOS

6.2. Size:902K nxp
buk7635-100a.pdf

BUK7635-100AN-channel TrenchMOS standard level FETRev. 02 18 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1

Otros transistores... BUK7623-75A , BUK7624-55A , BUK7626-100B , BUK7628-100A , BUK7628-55A , BUK762R0-40C , BUK762R7-30B , BUK7635-100A , 12N60 , BUK763R1-40B , BUK763R4-30B , BUK763R6-40C , BUK7640-100A , BUK764R0-55B , BUK764R0-75C , BUK764R3-40B , BUK765R2-40B .

Liste

Recientemente añadidas las descripciónes de los transistores: