BUK7635-55A Specs and Replacement
Type Designator: BUK7635-55A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: D2PAK
BUK7635-55A substitution
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BUK7635-55A datasheet
buk7535-55a buk7635-55a.pdf
BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS te... See More ⇒
buk7635-55a.pdf
BUK7635-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒
buk7635-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7635-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 34 A trench technology the devi... See More ⇒
Detailed specifications: BUK7623-75A, BUK7624-55A, BUK7626-100B, BUK7628-100A, BUK7628-55A, BUK762R0-40C, BUK762R7-30B, BUK7635-100A, 2N7002, BUK763R1-40B, BUK763R4-30B, BUK763R6-40C, BUK7640-100A, BUK764R0-55B, BUK764R0-75C, BUK764R3-40B, BUK765R2-40B
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