BUK764R0-55B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK764R0-55B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: D2PAK

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BUK764R0-55B datasheet

 ..1. Size:101K  philips
 buk754r0-55b buk764r0-55b.pdf pdf_icon

BUK764R0-55B

BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

 ..2. Size:846K  nxp
 buk764r0-55b.pdf pdf_icon

BUK764R0-55B

BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

 5.1. Size:191K  philips
 buk764r0-75c.pdf pdf_icon

BUK764R0-55B

BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

 5.2. Size:813K  nxp
 buk764r0-75c.pdf pdf_icon

BUK764R0-55B

BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

MOSTRAR MÁS

Otros transistores... BUK762R0-40C, BUK762R7-30B, BUK7635-100A, BUK7635-55A, BUK763R1-40B, BUK763R4-30B, BUK763R6-40C, BUK7640-100A, K3569, BUK764R0-75C, BUK764R3-40B, BUK765R2-40B, BUK7660-100A, BUK7675-100A, BUK7675-55A, BUK78150-55A, BUK7880-55A