BUK764R0-55B Specs and Replacement

Type Designator: BUK764R0-55B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: D2PAK

BUK764R0-55B substitution

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BUK764R0-55B datasheet

 ..1. Size:101K  philips
 buk754r0-55b buk764r0-55b.pdf pdf_icon

BUK764R0-55B

BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l... See More ⇒

 ..2. Size:846K  nxp
 buk764r0-55b.pdf pdf_icon

BUK764R0-55B

BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use ... See More ⇒

 5.1. Size:191K  philips
 buk764r0-75c.pdf pdf_icon

BUK764R0-55B

BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut... See More ⇒

 5.2. Size:813K  nxp
 buk764r0-75c.pdf pdf_icon

BUK764R0-55B

BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut... See More ⇒

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Detailed specifications: BUK762R0-40C, BUK762R7-30B, BUK7635-100A, BUK7635-55A, BUK763R1-40B, BUK763R4-30B, BUK763R6-40C, BUK7640-100A, K3569, BUK764R0-75C, BUK764R3-40B, BUK765R2-40B, BUK7660-100A, BUK7675-100A, BUK7675-55A, BUK78150-55A, BUK7880-55A

Keywords - BUK764R0-55B MOSFET specs

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