BUK7675-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7675-100A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 99 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: D2PAK
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BUK7675-100A Datasheet (PDF)
buk7575-100a buk7675-100a.pdf

BUK7575-100A;BUK7675-100ATrenchMOS standard level FETRev. 01 24 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-100A in SOT78 (TO-220AB)BUK7675-100A in SOT404 (D 2-PAK).2. Features TrenchMOS
buk7675-100a.pdf

BUK7675-100AN-channel TrenchMOS standard level FETRev. 02 31 July 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F
buk7575-55a buk7675-55a.pdf

BUK7575-55A; BUK7675-55ATrenchMOS standard level FETRev. 01 8 December 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-55A in SOT78 (TO-220AB)BUK7675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec
buk7675-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7675-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 19.7 Atrench technology the de
Otros transistores... BUK763R4-30B , BUK763R6-40C , BUK7640-100A , BUK764R0-55B , BUK764R0-75C , BUK764R3-40B , BUK765R2-40B , BUK7660-100A , IRFB3607 , BUK7675-55A , BUK78150-55A , BUK7880-55A , BUK7905-40AI , BUK7905-40AIE , BUK7905-40ATE , BUK7907-40ATC , BUK7907-55AIE .
History: BUK763R9-60E | APM7322K | SI4324DY | SDF17N60 | ZXMN3A04KTC | PPM6N12V10 | 2SK2834N
History: BUK763R9-60E | APM7322K | SI4324DY | SDF17N60 | ZXMN3A04KTC | PPM6N12V10 | 2SK2834N



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