BUK7675-100A Todos los transistores

 

BUK7675-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7675-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 99 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: D2PAK
 

 Búsqueda de reemplazo de BUK7675-100A MOSFET

   - Selección ⓘ de transistores por parámetros

 

BUK7675-100A Datasheet (PDF)

 ..1. Size:314K  philips
buk7575-100a buk7675-100a.pdf pdf_icon

BUK7675-100A

BUK7575-100A;BUK7675-100ATrenchMOS standard level FETRev. 01 24 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-100A in SOT78 (TO-220AB)BUK7675-100A in SOT404 (D 2-PAK).2. Features TrenchMOS

 ..2. Size:690K  nxp
buk7675-100a.pdf pdf_icon

BUK7675-100A

BUK7675-100AN-channel TrenchMOS standard level FETRev. 02 31 July 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

 6.1. Size:334K  philips
buk7575-55a buk7675-55a.pdf pdf_icon

BUK7675-100A

BUK7575-55A; BUK7675-55ATrenchMOS standard level FETRev. 01 8 December 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-55A in SOT78 (TO-220AB)BUK7675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec

 6.2. Size:56K  philips
buk7675-55 2.pdf pdf_icon

BUK7675-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK7675-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 19.7 Atrench technology the de

Otros transistores... BUK763R4-30B , BUK763R6-40C , BUK7640-100A , BUK764R0-55B , BUK764R0-75C , BUK764R3-40B , BUK765R2-40B , BUK7660-100A , IRFB3607 , BUK7675-55A , BUK78150-55A , BUK7880-55A , BUK7905-40AI , BUK7905-40AIE , BUK7905-40ATE , BUK7907-40ATC , BUK7907-55AIE .

History: BUK763R9-60E | APM7322K | SI4324DY | SDF17N60 | ZXMN3A04KTC | PPM6N12V10 | 2SK2834N

 

 
Back to Top

 


 
.