BUK7675-100A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK7675-100A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 99 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: D2PAK
- подбор MOSFET транзистора по параметрам
BUK7675-100A Datasheet (PDF)
buk7575-100a buk7675-100a.pdf

BUK7575-100A;BUK7675-100ATrenchMOS standard level FETRev. 01 24 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-100A in SOT78 (TO-220AB)BUK7675-100A in SOT404 (D 2-PAK).2. Features TrenchMOS
buk7675-100a.pdf

BUK7675-100AN-channel TrenchMOS standard level FETRev. 02 31 July 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F
buk7575-55a buk7675-55a.pdf

BUK7575-55A; BUK7675-55ATrenchMOS standard level FETRev. 01 8 December 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-55A in SOT78 (TO-220AB)BUK7675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec
buk7675-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7675-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 19.7 Atrench technology the de
Другие MOSFET... BUK763R4-30B , BUK763R6-40C , BUK7640-100A , BUK764R0-55B , BUK764R0-75C , BUK764R3-40B , BUK765R2-40B , BUK7660-100A , RFP50N06 , BUK7675-55A , BUK78150-55A , BUK7880-55A , BUK7905-40AI , BUK7905-40AIE , BUK7905-40ATE , BUK7907-40ATC , BUK7907-55AIE .
History: UT75N02 | UTT100N06 | SWP630A1 | SWP069R10VS | HUF75344A3 | UTP45N02 | HUF76129P3
History: UT75N02 | UTT100N06 | SWP630A1 | SWP069R10VS | HUF75344A3 | UTP45N02 | HUF76129P3



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