BUK7905-40ATE Todos los transistores

 

BUK7905-40ATE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7905-40ATE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 272 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO2205

 Búsqueda de reemplazo de MOSFET BUK7905-40ATE

 

BUK7905-40ATE Datasheet (PDF)

 ..1. Size:341K  philips
buk7105-40ate buk7905-40ate.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK71/7905-40ATETrenchPLUS standard level FETRev. 01 20 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring both very low on-state resistance andTrenchPLUS diodes for temperature sensing and ESD protection.Product availability:BUK7105-40ATE in SOT426 (

 3.1. Size:143K  philips
buk7105-40aie buk7905-40aie.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK71/7905-40AIETrenchPLUS standard level FETRev. 04 6 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c

 7.1. Size:121K  philips
buk7905 40ai-01.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK7905-40AITrenchPLUS standard level FETRev. 01 9 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and TrenchPLUScurrent sensing.1.2 Features Integrated current sensor Standard level compatible.1.3 Applications Va

 8.1. Size:346K  philips
buk7109-75ate buk7909-75ate.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK71/7909-75ATETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and a TrenchPLUSdiode for temperature sensing.Product availability:BUK7109-75ATE in SOT426 (D2-PAK)BUK7909-75ATE

 8.2. Size:330K  philips
buk7907-55ate.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK7907-55ATETrenchPLUS standard level FETRev. 02 16 July 2002 Product dataM3D7451. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance, and TrenchPLUSdiodes for Electrostatic Discharge (ESD) and temperature sensing.Product availability:BUK7907-55ATE in SOT263B.2. Fe

 8.3. Size:346K  philips
buk7107-40atc buk7907-40atc.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK71/7907-40ATCTrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUSdiodes for clamping, (ESD) protection and temperature sensing.Product availability:BUK7107-40ATC in SOT42

 8.4. Size:331K  philips
buk7109-75aie buk7909-75aie.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK71/7909-75AIETrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7109-75AIE in SOT426 (D2-PAK)BUK7

 8.5. Size:326K  philips
buk7107-55aie buk7907-55aie.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK71/7907-55AIETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7107-55AIE in SOT426 (D2-PAK)BUK

 8.6. Size:332K  philips
buk7108-40aie buk7908-40aie.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK71/7908-40AIETrenchPLUS standard level FETRev. 02 24 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c

 8.7. Size:702K  nxp
buk7908-40aie.pdf

BUK7905-40ATE
BUK7905-40ATE

BUK7908-40AIEN-channel TrenchPLUS standard level FETRev. 03 17 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has b

Otros transistores... BUK765R2-40B , BUK7660-100A , BUK7675-100A , BUK7675-55A , BUK78150-55A , BUK7880-55A , BUK7905-40AI , BUK7905-40AIE , IRFB3607 , BUK7907-40ATC , BUK7907-55AIE , BUK7907-55ATE , BUK7908-40AIE , BUK7909-75AIE , BUK7909-75ATE , BUK794R1-40BT , BUK7C06-40AITE .

 

 
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