BUK7905-40ATE - описание и поиск аналогов

 ..1. Size:341K  philips
 buk7105-40ate buk7905-40ate.pdf 

BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and TrenchPLUS diodes for temperature sensing and ESD protection. Product availability BUK7105-40ATE in SOT426 (

 3.1. Size:143K  philips
 buk7105-40aie buk7905-40aie.pdf 

BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 04 6 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. 1.2 Features ESD protection Q101 compliant Integrated c

 7.1. Size:121K  philips
 buk7905 40ai-01.pdf 

BUK7905-40AI TrenchPLUS standard level FET Rev. 01 9 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS current sensing. 1.2 Features Integrated current sensor Standard level compatible. 1.3 Applications Va

 8.1. Size:346K  philips
 buk7109-75ate buk7909-75ate.pdf 

BUK71/7909-75ATE TrenchPLUS standard level FET Rev. 01 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and a TrenchPLUS diode for temperature sensing. Product availability BUK7109-75ATE in SOT426 (D2-PAK) BUK7909-75ATE

 8.2. Size:330K  philips
 buk7907-55ate.pdf 

BUK7907-55ATE TrenchPLUS standard level FET Rev. 02 16 July 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance, and TrenchPLUS diodes for Electrostatic Discharge (ESD) and temperature sensing. Product availability BUK7907-55ATE in SOT263B. 2. Fe

 8.3. Size:346K  philips
 buk7107-40atc buk7907-40atc.pdf 

BUK71/7907-40ATC TrenchPLUS standard level FET Rev. 01 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS diodes for clamping, (ESD) protection and temperature sensing. Product availability BUK7107-40ATC in SOT42

 8.4. Size:331K  philips
 buk7109-75aie buk7909-75aie.pdf 

BUK71/7909-75AIE TrenchPLUS standard level FET Rev. 01 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability BUK7109-75AIE in SOT426 (D2-PAK) BUK7

 8.5. Size:326K  philips
 buk7107-55aie buk7907-55aie.pdf 

BUK71/7907-55AIE TrenchPLUS standard level FET Rev. 01 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability BUK7107-55AIE in SOT426 (D2-PAK) BUK

 8.6. Size:332K  philips
 buk7108-40aie buk7908-40aie.pdf 

BUK71/7908-40AIE TrenchPLUS standard level FET Rev. 02 24 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. 1.2 Features ESD protection Q101 compliant Integrated c

 8.7. Size:702K  nxp
 buk7908-40aie.pdf 

BUK7908-40AIE N-channel TrenchPLUS standard level FET Rev. 03 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has b