BUK7E11-55B Todos los transistores

 

BUK7E11-55B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7E11-55B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 157 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: I2PAK
 

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BUK7E11-55B Datasheet (PDF)

 8.1. Size:209K  nxp
 buk7e1r8-40e.pdf pdf_icon

BUK7E11-55B

BUK7E1R8-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 8.2. Size:207K  nxp
 buk7e1r9-40e.pdf pdf_icon

BUK7E11-55B

BUK7E1R9-40EN-channel TrenchMOS standard level FET5 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 8.3. Size:208K  nxp
 buk7e1r6-30e.pdf pdf_icon

BUK7E11-55B

BUK7E1R6-30EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 8.4. Size:205K  nxp
 buk7e13-60e.pdf pdf_icon

BUK7E11-55B

BUK7E13-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

MOSTRAR MÁS

Otros transistores... BUK7909-75AIE , BUK7909-75ATE , BUK794R1-40BT , BUK7C06-40AITE , BUK7C08-55AITE , BUK7C10-75AITE , BUK7E04-40A , BUK7E07-55B , P0903BDG , BUK7E2R3-40C , BUK7E2R7-30B , BUK7E4R3-75C , BUK7L06-34ARC , BUK7L11-34ARC , BUK7Y07-30B , BUK7Y08-40B , BUK7Y102-100B .

History: MDS1524URH

 

 
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