BUK7E11-55B PDF and Equivalents Search

 

BUK7E11-55B PDF Specs and Replacement


   Type Designator: BUK7E11-55B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 157 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: I2PAK
 

 BUK7E11-55B substitution

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BUK7E11-55B PDF Specs

 8.1. Size:209K  nxp
buk7e1r8-40e.pdf pdf_icon

BUK7E11-55B

BUK7E1R8-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒

 8.2. Size:207K  nxp
buk7e1r9-40e.pdf pdf_icon

BUK7E11-55B

BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒

 8.3. Size:208K  nxp
buk7e1r6-30e.pdf pdf_icon

BUK7E11-55B

BUK7E1R6-30E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒

 8.4. Size:205K  nxp
buk7e13-60e.pdf pdf_icon

BUK7E11-55B

BUK7E13-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒

Detailed specifications: BUK7909-75AIE , BUK7909-75ATE , BUK794R1-40BT , BUK7C06-40AITE , BUK7C08-55AITE , BUK7C10-75AITE , BUK7E04-40A , BUK7E07-55B , IRF1407 , BUK7E2R3-40C , BUK7E2R7-30B , BUK7E4R3-75C , BUK7L06-34ARC , BUK7L11-34ARC , BUK7Y07-30B , BUK7Y08-40B , BUK7Y102-100B .

Keywords - BUK7E11-55B MOSFET specs

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