BUK7E11-55B Datasheet and Replacement
Type Designator: BUK7E11-55B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 157 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: I2PAK
BUK7E11-55B substitution
BUK7E11-55B Datasheet (PDF)
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buk7e13-60e.pdf

BUK7E13-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
Datasheet: BUK7909-75AIE , BUK7909-75ATE , BUK794R1-40BT , BUK7C06-40AITE , BUK7C08-55AITE , BUK7C10-75AITE , BUK7E04-40A , BUK7E07-55B , P0903BDG , BUK7E2R3-40C , BUK7E2R7-30B , BUK7E4R3-75C , BUK7L06-34ARC , BUK7L11-34ARC , BUK7Y07-30B , BUK7Y08-40B , BUK7Y102-100B .
History: BUK7624-55A | UPA2766T1A
Keywords - BUK7E11-55B MOSFET datasheet
BUK7E11-55B cross reference
BUK7E11-55B equivalent finder
BUK7E11-55B lookup
BUK7E11-55B substitution
BUK7E11-55B replacement
History: BUK7624-55A | UPA2766T1A



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