BUK7E2R3-40C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7E2R3-40C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 333 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
Encapsulados: I2PAK
Búsqueda de reemplazo de BUK7E2R3-40C MOSFET
- Selecciónⓘ de transistores por parámetros
BUK7E2R3-40C datasheet
..1. Size:221K philips
buk7e2r3-40c.pdf 
BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance
3.1. Size:211K nxp
buk7e2r3-40e.pdf
BUK7E2R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep
7.1. Size:208K nxp
buk7e2r6-60e.pdf
BUK7E2R6-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep
9.1. Size:273K philips
buk754r3-75c buk7e4r3-75c.pdf
BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar
9.2. Size:202K philips
buk7e04-40a.pdf
BUK7E04-40A N-channel TrenchMOS standard level FET Rev. 03 15 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe
9.3. Size:79K philips
buk7e07-55b.pdf
BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 29 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive
9.4. Size:206K nxp
buk7e5r2-100e.pdf
BUK7E5R2-100E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Re
9.5. Size:211K nxp
buk7e3r1-40e.pdf
BUK7E3R1-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep
9.6. Size:209K nxp
buk7e1r8-40e.pdf
BUK7E1R8-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep
9.7. Size:210K nxp
buk7e8r3-40e.pdf
BUK7E8R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep
9.8. Size:207K nxp
buk7e1r9-40e.pdf
BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe
9.9. Size:208K nxp
buk7e1r6-30e.pdf
BUK7E1R6-30E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep
9.10. Size:205K nxp
buk7e13-60e.pdf
BUK7E13-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe
9.11. Size:208K nxp
buk7e4r6-60e.pdf
BUK7E4R6-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep
9.12. Size:208K nxp
buk7e4r0-80e.pdf
BUK7E4R0-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep
9.13. Size:208K nxp
buk7e3r5-60e.pdf
BUK7E3R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep
Otros transistores... BUK7909-75ATE, BUK794R1-40BT, BUK7C06-40AITE, BUK7C08-55AITE, BUK7C10-75AITE, BUK7E04-40A, BUK7E07-55B, BUK7E11-55B, 2SK3568, BUK7E2R7-30B, BUK7E4R3-75C, BUK7L06-34ARC, BUK7L11-34ARC, BUK7Y07-30B, BUK7Y08-40B, BUK7Y102-100B, BUK7Y10-30B
