All MOSFET. BUK7E2R3-40C Datasheet

 

BUK7E2R3-40C MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK7E2R3-40C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 333 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Drain Current |Id|: 100 A

Maximum Drain-Source On-State Resistance (Rds): 0.0023 Ohm

Package: I2PAK

BUK7E2R3-40C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUK7E2R3-40C Datasheet (PDF)

1.1. buk7e2r3-40c.pdf Size:221K _philips

BUK7E2R3-40C
BUK7E2R3-40C

BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance autom

5.1. buk7e07-55b.pdf Size:79K _philips

BUK7E2R3-40C
BUK7E2R3-40C

BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 29 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive criti

5.2. buk754r3-75c_buk7e4r3-75c.pdf Size:273K _philips

BUK7E2R3-40C
BUK7E2R3-40C

BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard leve

5.3. buk7e04-40a.pdf Size:202K _philips

BUK7E2R3-40C
BUK7E2R3-40C

BUK7E04-40A N-channel TrenchMOS standard level FET Rev. 03 15 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature

Datasheet: BUK7909-75ATE , BUK794R1-40BT , BUK7C06-40AITE , BUK7C08-55AITE , BUK7C10-75AITE , BUK7E04-40A , BUK7E07-55B , BUK7E11-55B , IRF9530 , BUK7E2R7-30B , BUK7E4R3-75C , BUK7L06-34ARC , BUK7L11-34ARC , BUK7Y07-30B , BUK7Y08-40B , BUK7Y102-100B , BUK7Y10-30B .

 


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