BUK7Y54-75B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7Y54-75B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21.4 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm
Encapsulados: LFPAK
Búsqueda de reemplazo de BUK7Y54-75B MOSFET
- Selecciónⓘ de transistores por parámetros
BUK7Y54-75B datasheet
buk7y53-100b.pdf
BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for us
buk7y59-60e.pdf
BUK7Y59-60E N-channel 60 V, 59 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y13-40b.pdf
BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au
buk7y25-40b.pdf
BUK7Y25-40B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y8r7-60e.pdf
BUK7Y8R7-60E N-channel 60 V, 8.7 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y7r8-80e.pdf
BUK7Y7R8-80E N-channel 80 V, 7.8 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y2r5-40h.pdf
BUK7Y2R5-40H N-channel 40 V, 2.5 m standard level MOSFET in LFPAK56 10 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Fea
buk7y1r4-40h.pdf
BUK7Y1R4-40H N-channel 40 V, 1.4 m standard level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Fea
buk7y14-80e.pdf
BUK7Y14-80E N-channel 80 V, 14 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y41-80e.pdf
BUK7Y41-80E N-channel 80 V, 41 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y18-55b.pdf
BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y12-100e.pdf
BUK7Y12-100E N-channel 100 V, 12 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y72-80e.pdf
BUK7Y72-80E N-channel 80 V, 72 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y15-100e.pdf
BUK7Y15-100E N-channel 100 V, 15 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y4r4-40e.pdf
BUK7Y4R4-40E N-channel 40 V, 4.4 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y6r0-60e.pdf
BUK7Y6R0-60E N-channel 60 V, 6.0 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y08-40b.pdf
BUK7Y08-40B N-channel TrenchMOS standard level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y19-100e.pdf
BUK7Y19-100E N-channel 100 V, 19 m standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant
buk7y22-100e.pdf
BUK7Y22-100E N-channel 100 V, 22 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y25-80e.pdf
BUK7Y25-80E N-channel 80 V, 25 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y3r0-40h.pdf
BUK7Y3R0-40H N-channel 40 V, 3.0 m standard level MOSFET in LFPAK56 10 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Fea
buk7y25-60e.pdf
BUK7Y25-60E N-channel 60 V, 25 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y10-30b.pdf
BUK7Y10-30B N-channel TrenchMOS standard level FET Rev. 03 9 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y9r9-80e.pdf
BUK7Y9R9-80E N-channel 80 V, 9.9 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y1r7-40h.pdf
BUK7Y1R7-40H N-channel 40 V, 1.7 m standard level MOSFET in LFPAK56 9 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Feat
buk7y07-30b.pdf
BUK7Y07-30B N-channel TrenchMOS standard level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in a
buk7y28-75b.pdf
BUK7Y28-75B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y98-80e.pdf
BUK7Y98-80E N-channel 80 V, 98 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y65-100e.pdf
BUK7Y65-100E N-channel 100 V, 65 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y7r2-60e.pdf
BUK7Y7R2-60E N-channel 60 V, 7.2 m standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant
buk7y102-100b.pdf
BUK7Y102-100B N-channel TrenchMOS standard level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y12-55b.pdf
BUK7Y12-55B N-channel TrenchMOS standard level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y15-60e.pdf
BUK7Y15-60E N-channel 60 V, 15 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y43-60e.pdf
BUK7Y43-60E N-channel 60 V, 43 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y20-30b.pdf
BUK7Y20-30B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y29-40e.pdf
BUK7Y29-40E N-channel 40 V, 29 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y113-100e.pdf
BUK7Y113-100E N-channel 100 V, 113 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Re
buk7y7r6-40e.pdf
BUK7Y7R6-40E N-channel 40 V, 7.6 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y21-40e.pdf
BUK7Y21-40E N-channel 40 V, 21 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y2r0-40h.pdf
BUK7Y2R0-40H N-channel 40 V, 2.0 m standard level MOSFET in LFPAK56 9 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Feat
buk7y12-40e.pdf
BUK7Y12-40E N-channel 40 V, 12 m standard level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y13-40b.pdf
BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y3r5-40h.pdf
BUK7Y3R5-40H N-channel 40 V, 3.5 m standard level MOSFET in LFPAK56 8 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Feat
buk7y4r8-60e.pdf
BUK7Y4R8-60E N-channel 60 V, 4.8 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y18-75b.pdf
BUK7Y18-75B N-channel TrenchMOS standard level FET 1 March 2013 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicati
buk7y38-100e.pdf
BUK7Y38-100E N-channel 100 V, 38 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y153-100e.pdf
BUK7Y153-100E N-channel 100 V, 153 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Re
buk7y3r5-40e.pdf
BUK7Y3R5-40E N-channel 40 V, 3.5 m standard level MOSFET in LFPAK56 19 June 2015 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Re
Otros transistores... BUK7Y18-55B, BUK7Y18-75B, BUK7Y20-30B, BUK7Y25-40B, BUK7Y28-75B, BUK7Y33-100B, BUK7Y35-55B, BUK7Y53-100B, IRF1405, BUK9107-40ATC, BUK9107-55ATE, BUK9207-30B, BUK9209-40B, BUK9212-55B, BUK9213-30A, BUK9214-30A, BUK92150-55A
History: FQB34P10TM | BUK9Y11-30B | AP9980GH | AP9980GJ | NCE70N290I | BUK9Y104-100B | AP9979GJ
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