All MOSFET. BUK7Y54-75B Datasheet

 

BUK7Y54-75B Datasheet and Replacement


   Type Designator: BUK7Y54-75B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: LFPAK
 

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BUK7Y54-75B Datasheet (PDF)

 8.1. Size:1009K  nxp
buk7y53-100b.pdf pdf_icon

BUK7Y54-75B

BUK7Y53-100BN-channel TrenchMOS standard level FETRev. 3 13 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for us

 8.2. Size:313K  nxp
buk7y59-60e.pdf pdf_icon

BUK7Y54-75B

BUK7Y59-60EN-channel 60 V, 59 m standard level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti

 9.1. Size:190K  philips
buk7y13-40b.pdf pdf_icon

BUK7Y54-75B

BUK7Y13-40BN-channel TrenchMOS standard level FETRev. 03 26 May 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au

 9.2. Size:806K  nxp
buk7y25-40b.pdf pdf_icon

BUK7Y54-75B

BUK7Y25-40BN-channel TrenchMOS standard level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

Datasheet: BUK7Y18-55B , BUK7Y18-75B , BUK7Y20-30B , BUK7Y25-40B , BUK7Y28-75B , BUK7Y33-100B , BUK7Y35-55B , BUK7Y53-100B , NCEP15T14 , BUK9107-40ATC , BUK9107-55ATE , BUK9207-30B , BUK9209-40B , BUK9212-55B , BUK9213-30A , BUK9214-30A , BUK92150-55A .

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