BUK9217-75B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK9217-75B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 185 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET BUK9217-75B

BUK9217-75B Datasheet (PDF)

8.1. Size:276K philips
buk9213-30a.pdf

BUK9213-30ATrenchMOS logic level FETRev. 01 29 July 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9213-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level

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buk9219 55a-01.pdf

BUK9219-55ATrenchMOS logic level FETRev. 01 24 October 2000 Product specificationM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated

8.3. Size:292K philips
buk9214-30a.pdf

BUK9214-30ATrenchMOS logic level FETRev. 01 20 March 2002 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9214-30A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic leve

8.4. Size:65K philips
buk92150-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 10.7 Athe device

8.5. Size:802K nxp
buk9219-55a.pdf

BUK9219-55AN-channel TrenchMOS logic level FETRev. 02 7 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

8.6. Size:719K nxp
buk92150-55a.pdf

BUK92150-55AN-channel TrenchMOS logic level FET12 June 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction l

8.7. Size:969K nxp
buk9212-55b.pdf

BUK9212-55BN-channel TrenchMOS logic level FETRev. 03 3 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

8.8. Size:756K nxp
buk9214-30a.pdf

BUK9214-30AN-channel TrenchMOS logic level FETRev. 3 14 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

8.9. Size:725K nxp
buk9215-55a.pdf

BUK9215-55AN-channel TrenchMOS logic level FET7 April 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 complian

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