BUK9217-75B Specs and Replacement

Type Designator: BUK9217-75B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 185 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DPAK

BUK9217-75B substitution

- MOSFET ⓘ Cross-Reference Search

 

BUK9217-75B datasheet

 8.1. Size:276K  philips
buk9213-30a.pdf pdf_icon

BUK9217-75B

BUK9213-30A TrenchMOS logic level FET Rev. 01 29 July 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9213-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level ... See More ⇒

 8.2. Size:294K  philips
buk9219 55a-01.pdf pdf_icon

BUK9217-75B

BUK9219-55A TrenchMOS logic level FET Rev. 01 24 October 2000 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9219-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated ... See More ⇒

 8.3. Size:292K  philips
buk9214-30a.pdf pdf_icon

BUK9217-75B

BUK9214-30A TrenchMOS logic level FET Rev. 01 20 March 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9214-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic leve... See More ⇒

 8.4. Size:65K  philips
buk92150-55a 1.pdf pdf_icon

BUK9217-75B

Philips Semiconductors Product specification TrenchMOS transistor BUK92150-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 10.7 A the device... See More ⇒

Detailed specifications: BUK9107-55ATE, BUK9207-30B, BUK9209-40B, BUK9212-55B, BUK9213-30A, BUK9214-30A, BUK92150-55A, BUK9215-55A, EMB04N03H, BUK9219-55A, BUK9222-55A, BUK9225-55A, BUK9226-75A, BUK9230-100B, BUK9230-55A, BUK9237-55A, BUK9240-100A

Keywords - BUK9217-75B MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.