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cem2133.pdf datasheet:

cem2133cem2133

CEM2133 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 12 V Drain Current-Continuous ID -10 A Drain Current-Pulsed a IDM -40 A Maximum Power Dissipation PD 3 W Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 50 C/W This is preliminary information on a new product in development now . Rev 1. 2013.Jan Details are s

 

Keywords - ALL TRANSISTORS DATASHEET

 cem2133.pdf Design, MOSFET, Power

 cem2133.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cem2133.pdf Database, Innovation, IC, Electricity

 

 
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