cep60n10 ceb60n10.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep60n10 ceb60n10.pdf Principales características:

CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 57 A Drain Current-Pulsed a IDM 228 A Maximum Power Dissipation @ TC = 25 C 200 W PD - Derate above 25 C 1.3 W/ C Single Pulsed Avalanche Energy d EAS 560 mJ Single Pulsed Avalanche Current d IAS 40 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 0.75 C/W Th