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March 2011 FDMS3602S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m at VGS = 4.5 V, ID = 14 A buck converters. The control MOSFET (Q1) and synchronous Q2 N-Channel SyncFET (Q2) have been designed to provide optimal power Max rDS(on) = 2.2 m at VGS = 10 V, ID = 26 A efficiency. Max rDS(on) = 3.4 m at VGS = 4.5 V, ID = 22 A Applications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communications inductance and reduced switch node ringing

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