hgtg20n60b3d.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

hgtg20n60b3d.pdf Principales características:

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs Short Circuit Rated and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction Low Conduction Loss loss of a bipolar transistor. The much lower on-state voltage Hyperfast Anti-Parallel Diode drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. Packaging The IGBT is ideal for many high voltage switching JEDEC STYLE TO-247 applications operating at moderate frequencies where low E conduction losses are essential. C G