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2sk3699-01mr.pdf Principales características:

2SK3699-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 900 V VDSX *5 900 V Equivalent circuit schematic Continuous drain current ID 3.7 A Pulsed drain current ID(puls] 14.8 A Gate-source voltage VGS 30 V Drain(D) Repetitive or non-repetitive IAR *2 3.7 A Maximum Avalanche Energy EAS *1 171.1 mJ Maximum Drain-Source dV/dt dVDS/dt *4 40 kV/ s Peak Diode Recovery dV/dt dV/dt *3 5 kV/ s Gate(G) Max. power dissipation PD Ta=25 C 2.16 W Source(S) Tc=25 C

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