irfz34ns.pdf Principales características:
PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175 C Operating Temperature RDS(on) = 0.040 Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mou
Keywords - ALL TRANSISTORS. Principales características
irfz34ns.pdf Design, MOSFET, Power
irfz34ns.pdf RoHS Compliant, Service, Triacs, Semiconductor
irfz34ns.pdf Database, Innovation, IC, Electricity
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