gwm100-0085x1-smd.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

gwm100-0085x1-smd.pdf Principales características:

GWM100-0085X1 VDSS = 85 V Three phase full Bridge ID25 = 103 A with Trench MOSFETs RDSon typ. = 5.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 85 V - electric power steering VGS 20 V - starter generator in industrial vehicles ID25 TC = 25 C 103 A - propulsion drives ID90 TC = 90 C 77 A - fork lift drives ID110 TC = 110 C 68 A in battery supplied equipment IF25 TC = 25 C (diode) tbd A Features IF90 TC = 90 C (diode) tbd A IF110 TC = 110 C (diode) tbd A MOSFETs in trench technology - low RDSon Symbol Conditions Characteristic Values - optimized intrinsic reverse diode package (TJ = 25 C, unless otherwise specified)